FDH50N50 Fairchild Semiconductor, FDH50N50 Datasheet - Page 5

• Manufacturer Part Number: FDH50N50
• Description: MOSFET N-CH 500V 48A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6460pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH50N50 / FDA50N50 Rev. A
Typical Performance Characteristics
Figure 13. Typical Switching Losses vs.
1,000
800
600
400
200
0
0
5
10
Gate Resistance
15
R
G
, Gate resistance [ ]
20
Figure 15. Transient Thermal Resistance Curve
25
10
10
10
-1
-2
-3
10
D=0.5
-5
30
0.1
0.05
0.02
0.01
0.2
35
10
Eoff
-4
single pulse
t
40
1
Eon
, Square W ave Pulse Duration [sec]
Notes :
1. V
2. V
3. I
4. T
D
J
DS
GS
= 25A
45
= 125
10
= 400 V
= 12 V
-3
(Continued)
o
C !
50
5
10
-2
Figure 14. Unclamped Inductive Switching
100
10
1
0.01
Notes :
10
1. Z
2. Duty Factor, D=t
3. T
-1
JM
JC
Starting T
(t) = 0.2
- T
C
= P
DM
o
C/W Max.
10
J
* Z
= 150
0
0.1
1
/t
JC
2
(t)
o
t
C
AV
Capability
, Time In Avalanche [ms]
10
1
Notes :
1. If R = 0
2. If R 0
1
t
t
AV
AV
Starting T
= (L)(I
= (L/R)In[(I
AS
)/(1.3 Rated BV
J
AS
= 25
x R)/(1.3 Rated BV
10
o
C
www.fairchildsemi.com
DSS
- V
DD
)
DSS
- V
100
DD
)+1]