FDH50N50 Fairchild Semiconductor, FDH50N50 Datasheet - Page 3

• Manufacturer Part Number: FDH50N50
• Description: MOSFET N-CH 500V 48A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6460pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH50N50 / FDA50N50 Rev. A
Typical Performance Characteristics
12,000
10,000
0.4
0.3
0.2
0.1
0.0
Figure 5. Capacitance Characteristics
8,000
6,000
4,000
2,000
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
10
0
-1
0
2
1
0
10
10
Drain Current and Gate Voltage
-1
Top :
Bottom : 5.5 V
-1
25
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
50
V
V
DS
DS
, Drain-Source Voltage [V]
10
I
, Drain-Source Voltage [V]
D
10
, Drain Current [A]
0
0
75
C
rss
V
GS
C
= 10V
100
oss
C
C
C
iss
oss
rss
10
= C
= C
= C
C
125
1
10
iss
gs
gd
ds
1
+ C
+ C
Notes :
1. 250 s Pulse Test
2. T
gd
gd
Note : T
C
(C
= 25
ds
Notes :
1. V
2. f = 1 MHz
V
150
= shorted)
o
GS
C !
J
GS
= 25
= 20V
= 0 V
o
C
175
10
2
3
100
160
120
Figure 2. Transfer Characteristics
0.1
12
10
Figure 4. Body Diode Forward Voltage
10
Figure 6. Gate Charge Characteristics
80
40
8
6
4
2
0
1
0
0.2
0
4
Variation vs. Source Current
150
0.4
o
C !
20
5
25
and Temperatue
o
C !
V
V
0.6
Q
SD
GS
G
40
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
6
0.8
V
150
DS
60
V
= 400V
7
-55
o
DS
C
25
V
DS
= 250V
o
o
C !
C
1.0
= 100V
80
8
1.2
Notes :
1. V
2. 250 s Pulse Test
Notes :
1. V
2. 250 s Pulse Test
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DS
GS
= 40V
= 0V
Note : I
100
9
1.4
D
= 48A
120
1.6
10