FDB4020P Fairchild Semiconductor, FDB4020P Datasheet - Page 4

• Manufacturer Part Number: FDB4020P
• Description: MOSFET P-CH 20V 16A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDB4020P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 665pF @ 10V
• Power - Max: 37.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate-Charge Characteristics.
0
1
R
I
D
DS(ON)
= -16A
0.05
SINGLE PULSE
0.5
0.2
0.1
R
0.0001
V
1
T
LIMIT
GS
JC
A
= 4
= 25
= -4.5V
-V
3
o
DS
C/W
o
C
, DRAIN-SOURCE VOLTAGE (V)
D = 0.5
0.05
Q
0.1
Single Pulse
0.2
g
DC 100ms
, GATE CHARGE (nC)
10ms
10
6
1ms
0.001
Figure 11. Transient Thermal Response Curve.
100 s
V
DS
(continued)
= -5V
9
-15V
Transient themal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1.
-10V
100
0.01
12
t , TIME (sec)
1
1400
1200
1000
1000
800
600
400
200
800
600
400
200
Figure 8. Capacitance Characteristics.
0.0001
0
0
Figure 10. Single Pulse Maximum
0
0.1
0.001
Power Dissipation.
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
0.01
T - T
Duty Cycle, D = t / t
R
8
J
JC
R
1
t
1
A
(t) = r(t) * R
JC
t
= P * R
2
= 4°C/W
0.1
12
SINGLE PULSE
C
C
C
JC
1
R
ISS
OSS
RSS
T
JC
(t)
JC
A
2
= 4
= 25
o
C/W
o
C
1
16
f = 1 MHz
V
FDP4020P Rev. B
10
GS
= 0 V
10
20