FDB4020P Fairchild Semiconductor, FDB4020P Datasheet - Page 3

• Manufacturer Part Number: FDB4020P
• Description: MOSFET P-CH 20V 16A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDB4020P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 665pF @ 10V
• Power - Max: 37.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
20
16
12
40
32
24
16
8
4
0
8
0
1.8
1.6
1.4
1.2
0.8
0.6
0
0
Figure 1. On-Region Characteristics.
1
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
-50
V
DS
V
0.5
= -5V
I
GS
D
-25
= -16A
= -4.5V
2
-V
V
with Temperature.
1
GS
-V
GS
0
T
, GATE TO SOURCE VOLTAGE (V)
DS
= -4.5V
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
1.5
25
-4.0V
4
50
T
-3.5V
A
2
= -55
75
o
-3.0V
C
6
2.5
25
100
o
C
-2.5V
125
3
o
C)
125
o
8
C
-2.0V
3.5
150
4
10
175
0.0001
0.16
0.12
0.08
0.04
0.2
0.01
Figure 6. Body Diode Forward Voltage
100
1.8
1.6
1.4
1.2
0.8
0
with Drain Current and Gate Voltage.
1.5
2
1
1
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
0
0
V
Variation with Source Current
with Gate-to-Source Voltage.
V
GS
GS
= -2.0V
= 0V
2
T
-V
5
A
SD
-V
= 125
and Temperature.
, BODY DIODE FORWARD VOLTAGE (V)
GS
-2.5V
0.4
2.5
, GATE TO SOURCE VOLTAGE (V)
o
C
-I
10
D
25
-3.0V
, DIRAIN CURRENT (A)
o
C
3
-55
-3.5V
o
0.8
15
C
3.5
-4.0V
20
T
T
-4.5V
A
A
4
= 125
= 25
1.2
o
o
C
C
I
25
D
4.5
= -8A
FDP4020P Rev. B
1.6
30
5