NDS8434A Fairchild Semiconductor, NDS8434A Datasheet - Page 5

• Manufacturer Part Number: NDS8434A
• Description: MOSFET P-CH 20V 7.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1730pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8434ATR

Typical Electrical Characteristics
V
Figure 9. Capacitance Characteristics
6 0 0 0
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
GS
Figure 11. Switching Test Circuit
5 0 0
1 5 0
1.075
1.025
0.975
1.05
0.95
0 .1
1
Figure 7. Breakdown Voltage
-50
Variation with Temperature.
I = -250µA
D
f = 1 MHz
V
GS
R
0 .2
-25
= 0 V
GEN
-V
DS
T , JUNCTION TEMPERATURE (°C)
0
J
V
0 .5
, DRAIN TO SOURCE VOLTAGE (V)
IN
G
25
1
50
-V
D
S
2
DD
75
R
.
L
100
D U T
.
5
(continued)
C rss
C oss
C iss
125
1 0
V
150
O U T
2 0
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation with
1 0 %
0.0001
Figure 10. Gate Charge Characteristics.
5
4
3
2
1
0
0.001
0
0.01
Figure 12. Switching Waveforms
0.1
20
10
I
1
D
0
= -7.9A
V
t
GS
5 0 %
o n
1 0 %
T = 125°C
= 0V
J
0.2
-V
SD
10
t
9 0 %
PULSE WIDTH
, BODY DIODE FORWARD VOLTAGE (V)
r
Source Current and Temperature
Q
0.4
g
, GATE CHARGE (nC)
25°C
t
d(off)
0.6
20
NDS8434A Rev.D
-55°C
5 0 %
V
0.8
DS
= -5V
9 0 %
.
t
1 0 %
off
30
9 0 %
-15V
1
INVERTED
t
f
-10V
1.2
.
40