NDS8434A Fairchild Semiconductor, NDS8434A Datasheet - Page 4

• Manufacturer Part Number: NDS8434A
• Description: MOSFET P-CH 20V 7.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1730pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8434ATR

Typical Electrical Characteristics
-30
-25
-20
-15
-10
-25
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-5
-5
0
0
1
-50
0
0
V
V
Figure 1. On-Region Characteristics
I = -7.9A
DS
Figure 5. Transfer Charateristics
D
GS
V
Figure 3. On-Resistance Variation
= -5 V
GS
-25
= -4.5V
= -4.5V
V
-0.5
-0.5
V
GS
0
T , JUNCTION TEMPERATURE (°C)
DS
J
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0
-2.5
25
-2.0
-1
-1
50
-1.5
T
75
J
= -55°C
-1.5
-1.5
100
.
125°C
125
.
25°C
-2
150
-2
1.8
1.6
1.4
1.2
0.8
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1.4
1.2
0.8
0.6
0.4
0.2
1
1
1
-50
0
0
with Drain Current and Gate Voltage
with Drain Current and Temperature
V
Figure 6. Gate Threshold Variation
V
Figure 4. On-Resistance Variation
GS
Figure 2. On-Resistance Variation
GS
-25
= -4.5V
=-2.0V
-5
-6
T , JUNCTION TEMPERATURE (°C)
0
with Temperature
J
-10
I
I
D
D
-2.5
25
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-12
-15
-2.7
T = 125°C
50
J
NDS8434A Rev.D
-55°C
25°C
-18
-3.0
75
-20
.
I
D
100
V
-3.5
DS
=-250µA
-24
= V
-25
GS
125
-4.5
.
.
-30
-30
150