FDS2170N7 Fairchild Semiconductor, FDS2170N7 Datasheet - Page 5

• Manufacturer Part Number: FDS2170N7
• Description: MOSFET N-CH 200V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS2170N7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 128 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1292pF @ 100V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2170N7TR; FDS2170N7_NL; FDS2170N7_NLTR; FDS2170N7_NLTR

Typical Characteristics
14
12
10
0.001
8
6
4
2
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.001
0.1
10
0
Figure 7. Gate Charge Characteristics.
0.01
1
0.1
0.1
1
0.001
R
SINGLE PULSE
I
R
D
DS(ON)
θJA
= 3.0A
5
V
T
GS
A
= 85
= 25
LIMIT
= 10V
D = 0.5
0.2
o
o
C/W
10
C
0.1
0.05
V
1
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
g
15
, GATE CHARGE (nC)
SINGLE PULSE
0.01
DC
20
10
1s
100ms
Figure 11. Transient Thermal Response Curve.
10ms
V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
DS
25
= 50V
1ms
100
30
150V
100µs
0.1
35
100V
1000
40
t
1
, TIME (sec)
1
1800
1500
1200
50
40
30
20
10
900
600
300
0
0.01
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
C
OSS
0.1
40
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
t
80
1
, TIME (sec)
C
ISS
10
120
P(pk)
Duty Cycle, D = t
100
T
R
J
R
θJA
- T
θJA
SINGLE PULSE
(t) = r(t) * R
R
A
θJA
t
100
T
= 85 °C/W
1
160
= P * R
FDS2170N7 Rev D (W)
A
t
2
= 85°C/W
= 25°C
V
f = 1MHz
GS
θJA
= 0 V
θJA
1
(t)
/ t
1000
200
2
1000