FDS2170N7 Fairchild Semiconductor, FDS2170N7 Datasheet

MOSFET N-CH 200V 3A 8-SOIC

FDS2170N7

Manufacturer Part Number
FDS2170N7
Description
MOSFET N-CH 200V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS2170N7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
128 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1292pF @ 100V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS2170N7TR
FDS2170N7_NL
FDS2170N7_NLTR
FDS2170N7_NLTR

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FDS2170N7
200V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
• Synchronous rectifier
• DC/DC converter
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Device Marking
STG
N-Channel
FDS2170N7
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
DS(ON)
MOSFET
in a small package.
– Continuous
– Pulsed
FDS2170N7
has
Device
Parameter
been
designed
T
A
MOSFET
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• 3.0 A, 200 V. R
• High performance trench technology for extremely
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
5
6
7
8
Tape width
DS(ON)
–55 to +150
12mm
Drain Contact
Ratings
Bottom-side
± 20
200
3.0
3.0
1.8
0.5
20
40
= 128 mΩ @ V
December 2003
4
3
2
1
FDS2170N7 Rev D(W)
GS
2500 units
Quantity
= 10 V
Units
°C/W
°C
W
V
V
A

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FDS2170N7 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 13’’ December 2003 = 128 mΩ DS(ON) GS Bottom-side Drain Contact Ratings Units 200 V ± 3 3.0 W 1.8 °C –55 to +150 °C/W 40 0.5 Tape width Quantity 12mm 2500 units FDS2170N7 Rev D(W) ...

Page 2

... Typ Max Units =10 A 400 D 10 200 231 mV/°C 1 100 –100 2 4 4.5 –10 mV/°C 107 128 213 268 15 1292 2.5 0.76 1.2 (Note 2) 95 (Note 2) 552 b) 85°C/W when mounted on a minimum pad copper FDS2170N7 Rev D ( µ mΩ Ω ...

Page 3

... Dimensional Outline and Pad Layout FDS2170N7 Rev D (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 5.5V 6.0V 6.5V 10V DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS2170N7 Rev D ( 1.2 ...

Page 5

... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS OSS 40 80 120 160 V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 85°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ °C/W θJA P(pk θ Duty Cycle 100 FDS2170N7 Rev D (W) 200 1000 ( 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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