FDS2170N7 Fairchild Semiconductor, FDS2170N7 Datasheet - Page 3

• Manufacturer Part Number: FDS2170N7
• Description: MOSFET N-CH 200V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS2170N7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 128 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1292pF @ 100V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2170N7TR; FDS2170N7_NL; FDS2170N7_NLTR; FDS2170N7_NLTR

Device #1 FDC6036P_F077
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #2 FDC796N
Package:
#Leads:
P/C
X
X
X
X
TTR23
006
TTR23
006
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 8V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
16V
Delta 100C, 2
Min cycle
Conditions
Readpoints
TP1
132
168
168
5000
100
TP2
264
500
500
10000
500
TP3
1000
1000
Read-
points
Samples
A
77
77
77
77
77
77
Sample
A
0
Pg. 3