HUF76639P3 Fairchild Semiconductor, HUF76639P3 Datasheet - Page 5

• Manufacturer Part Number: HUF76639P3
• Description: MOSFET N-CH 100V 50A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76639P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: Q1053436

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
400
300
200
100
5000
1000
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
100
1.2
1.0
0.8
0.6
0.4
0
40
0
-80
0.1
V
GS
V
GS
= 4.5V, V
JUNCTION TEMPERATURE
= 0V, f = 1MHz
-40
R
GS
10
V
T
DS
, GATE TO SOURCE RESISTANCE ( )
DD
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= 50V, I
0
1
20
D
40
= 34A
t
C
t
f
r
RSS
80
30
V
GS
C
C
10
C
(Continued)
OSS
t
= V
ISS
GD
120
d(OFF)
DS
o
C
C)
, I
C
40
GS
DS
D
160
= 250 A
+ C
+ C
t
d(ON)
GD
GD
200
100
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
600
500
400
300
200
100
10
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
GS
I
DD
D
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 10V, V
= 250 A
= 50V
-40
R
15
GS
10
T
, GATE TO SOURCE RESISTANCE ( )
J
DD
, JUNCTION TEMPERATURE (
= 50V, I
Q
0
g
, GATE CHARGE (nC)
30
20
D
40
= 51A
HUF76639P3, HUF76639S3S Rev. B
80
WAVEFORMS IN
DESCENDING ORDER:
45
30
I
I
I
D
D
D
= 51A
= 35A
= 15A
120
o
C)
60
40
160
t
t
d(OFF)
f
t
d(ON)
t
r
200
50
75