HUF76639P3 Fairchild Semiconductor, HUF76639P3 Datasheet - Page 3

• Manufacturer Part Number: HUF76639P3
• Description: MOSFET N-CH 100V 50A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76639P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: Q1053436

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1000
1.2
1.0
0.8
0.6
0.4
0.2
100
50
0
0.01
0.1
10
0
2
1
-5
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
V
GS
T
= 10V
C
50
, CASE TEMPERATURE (
SINGLE PULSE
10
75
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
V
GS
= 5V
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
60
50
40
30
20
10
0
25
CASE TEMPERATURE
50
10
10
V
-1
T
GS
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
= 4.5V
75
J
V
GS
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
DM
= 10V
C
I = I
= 25
x Z
25
HUF76639P3, HUF76639S3S Rev. B
o
10
10
C
P
JC
1
DM
o
0
0
/t
125
C DERATE PEAK
x R
2
o
175 - T
C)
JC
150
t
+ T
1
t
C
150
2
C
175
10
10
1
1