NDS356P Fairchild Semiconductor, NDS356P Datasheet - Page 6

• Manufacturer Part Number: NDS356P
• Description: MOSFET P-CH 20V 1.1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS356P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356PTR

Typical Electrical Characteristics
0.005
0.002
0.001
5
4
3
2
1
0
0.05
0.02
0.01
0
0.5
0.2
0.1
Figure 13. Transconductance Variation with
0.0001
1
Drain Current and Temperature
D = 0.5
0.02
0.01
0.05
0.2
0.1
-2
Single Pulse
I , DRAIN CURRENT (A)
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using the conditions described in note 1c. Transient thermal response will
D
0.001
-4
T = -55°C
change depending on the circuit board design.
J
25°C
-6
125°C
0.01
(continued)
V
DS
-8
= -5V
-10
0.1
t , TIME (sec)
1
0.05
0.02
0.01
0.2
0.1
2 0
1 0
5
1
0.1
Figure 14. Maximum Safe Operating Area
SINGLE PULSE
0.2
V
T
GS
A
1
= 25°C
= -10V
- V
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
2
T - T
1 0
R
Duty Cycle, D = t /t
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
5
= 250 °C/W
1 0
JA
1
JA
(t)
2
1 0 0
2 0
NDS356P Rev. E1
3 0
3 0 0