NDS356P Fairchild Semiconductor, NDS356P Datasheet - Page 5

• Manufacturer Part Number: NDS356P
• Description: MOSFET P-CH 20V 1.1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS356P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356PTR

Typical Electrical Characteristics
V
GS
7 0 0
5 0 0
3 0 0
2 0 0
1 0 0
5 0
3 0
1.08
1.06
1.04
1.02
0.98
0.96
Figure 9. Capacitance Characteristics
Figure 7. Breakdown Voltage Variation with
0.1
1
-50
Figure 11. Switching Test Circuit
I
D
R
f = 1 MHz
V
0.2
-25
= -250µA
GS
GEN
= 0 V
-V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
V
Temperature
IN
G
25
1
50
D
S
V
2
DD
7 5
R
L
1 0 0
DUT
5
(continued)
1 2 5
1 0
V
C iss
OUT
C oss
C rss
1 5 0
2 0
Figure 8. Body Diode Forward Voltage Variation with
V
t
V
0.001
OUT
0.01
d(on)
Figure 10. Gate Charge Characteristics
0.5
0.2
0.1
IN
10
-10
2
1
-8
-6
-4
-2
-0.3
0
1 0 %
0
T = 125°C
Figure 12. Switching Waveforms
I
J
V
D
GS
= -1.1 A
= 0V
1
V
-0.6
t
SD
o n
5 0 %
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
Source Current and Temperature
25°C
2
t
9 0 %
PULSE WIDTH
r
Q
-0.9
g
, GATE CHARGE (nC)
3
-55°C
V
t
-1.2
DS
d(off)
= -5 V
4
5 0 %
-1.5
5
9 0 %
-10
t
1 0 %
off
9 0 %
NDS356P Rev. E1
6
-1.8
INVERTED
t
f
7