BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 8
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK7506-55A,127
Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-55A127.pdf
(15 pages)
Specifications of BUK7506-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
BUK7506-55A
BUK7506-55A
Philips Semiconductors
9397 750 08421
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
I D
(A)
function of gate-source voltage; typical values.
120
100
= 25 V
= 0 V
80
60
40
20
0
0
2
T j = 175 o C
4
T j = 25 o C
I S
V GS (V)
(A)
100
80
60
40
20
0
0.0
03nf27
6
0.2
Rev. 02 — 03 July 2001
BUK7506-55A; BUK7606-55A
T j = 175 o C
0.4
Fig 14. Gate-source voltage as a function of turn-on
0.6
T
j
= 25 C; I
T j = 25 o C
0.8
gate charge; typical values.
V SD (V)
V GS
(V)
10
03nf24
8
6
4
2
0
0
1.0
D
= 25 A
20
TrenchMOS™ standard level FET
40
V DD = 14 V
60
© Philips Electronics N.V. 2001. All rights reserved.
80
V DD = 44 V
100
Q G (nC)
03nf25
120
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