BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK7506-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7506-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0063 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055407127; BUK7506-55A; BUK7506-55A

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 08421
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
Rev. 02 — 03 July 2001
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
BUK7506-55A; BUK7606-55A
= 20 k
55 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
GS
= 25 A
GS
= 10 V; R
= 10 V
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 75 A;
= 50 ;
TrenchMOS™ standard level FET
[1]
[1]
[2]
[2]
[1]
[2]
Typ
5.3
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
55
154
300
175
6.3
13.2
Max
55
55
154
75
75
616
300
+175
+175
154
75
616
1.1
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
J
C
C
C
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