BUK7506-75B,127 NXP Semiconductors, BUK7506-75B,127 Datasheet
BUK7506-75B,127
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BUK7506-75B,127 Summary of contents
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... Rev. 02 — 20 September 2002 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D 1.2 Features Very low on-state resistance. 175 C rated 1.3 Applications ...
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Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...
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Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit ...
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Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to th(j-a) ambient SOT78 SOT404 4.1 Transient thermal impedance 1 Z th(j-mb) (K/W) = 0.5 ...
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Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...
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Philips Semiconductors Table 4: Characteristics …continued unless otherwise specified j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 10278 Product data Conditions Min ...
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Philips Semiconductors 400 (A) 6.5 300 200 100 300 Fig 5. Output characteristics: drain current as a function of drain-source ...
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Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature. 120 g ...
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Philips Semiconductors 100 175 º Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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Philips Semiconductors 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...
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Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...
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Philips Semiconductors 7. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 10278 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...
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Philips Semiconductors 8. Revision history Table 5: Revision history Rev Date CPCN Description 02 20020920 - Product data (9397 750 10278) Modifications: • Description in N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, ...
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Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...
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Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...