BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK7506-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7506-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0063 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055407127; BUK7506-55A; BUK7506-55A

Table 5:
T
Philips Semiconductors
9397 750 08421
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
I D
(A)
= 25 C; t
= 25 C
R DSon
400
350
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
(m )
50
Characteristics
0
12
10
8
6
4
2
0
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
12
0
14
p
= 300 s
20
20
2
10 9
8.5
40
V GS (V) =
4
…continued
60
5.5
6
V GS (V) =
80
6
8
6.5
V DS (V)
100
7.5
Conditions
I
Figure 15
I
V
10
7
8
S
S
03nf29
03nf30
I D (A)
GS
= 30 A; V
= 20 A; dI
10
120
= 10 V; V
6.5
5.5
4.5
Rev. 02 — 03 July 2001
GS
S
BUK7506-55A; BUK7606-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
R DSon
j
(m )
a
= 25 C; I
a
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
8.5
7.5
6.5
5.5
4.5
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
8
7
6
5
4
--------------------------- -
R
-60
5
DSon 25 C
R
DSon
D
Min
-20
= 25 A
TrenchMOS™ standard level FET
10
20
Typ
0.85
80
200
60
© Philips Electronics N.V. 2001. All rights reserved.
100
15
V GS (V)
140
Max
1.2
T j ( o C)
03nf28
03ne89
180
20
Unit
V
ns
nC
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