BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 12

• Manufacturer Part Number: BUK7506-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7506-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0063 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055407127; BUK7506-55A; BUK7506-55A

11. Revision history
Table 6:
Philips Semiconductors
9397 750 08421
Product data
Rev Date
02
01
20010703
19981217
Revision history
CPCN
-
-
Description
Product Specification; second version; supersedes Rev. 01 of 19981217.
Product Specification; initial versions
•
Combined BUK7506-55A and BUK7606-55A into one data sheet. Updated
Figure
3, and
Figure
Rev. 02 — 03 July 2001
4.
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
© Philips Electronics N.V. 2001. All rights reserved.
Figure
2,
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