BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 5
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK7506-55A,127
Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-55A127.pdf
(15 pages)
Specifications of BUK7506-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
BUK7506-55A
BUK7506-55A
8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 08421
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
f = 1 MHz;
V
V
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 02 — 03 July 2001
and
Figure 12
BUK7506-55A; BUK7606-55A
DS
DS
D
8
GS
L
G
= 25 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
2
1
TrenchMOS™ standard level FET
Typ
3
0.05
2
5.3
4500
960
510
35
115
155
110
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
Max
4
4.4
10
500
100
6.3
13.2
6000
1200
850
Unit
V
V
V
V
V
nA
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A