PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN9R5-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 211W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 89A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.6 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064327127

NXP Semiconductors
PSMN9R5-100PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
V
All information provided in this document is subject to legal disclaimers.
= 25 °C
GS
003aad280
T
003aae020
j
(°C)
(V)
Rev. 03 — 28 October 2010
180
6
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
a
I
10
10
10
10
10
10
D
3.2
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN9R5-100PS
2
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad774
T
j
(V)
(°C)
03aa35
180
6
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