PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 8
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PSMN9R5-100PS,127
Manufacturer Part Number
PSMN9R5-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100PS127.pdf
(15 pages)
Specifications of PSMN9R5-100PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
211W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
82nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
89A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 15A, 10V
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.6 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
89 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064327127
NXP Semiconductors
PSMN9R5-100PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
V
All information provided in this document is subject to legal disclaimers.
= 25 °C
GS
003aad280
T
003aae020
j
(°C)
(V)
Rev. 03 — 28 October 2010
180
6
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
a
I
10
10
10
10
10
10
D
3.2
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN9R5-100PS
2
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad774
T
j
(V)
(°C)
03aa35
180
6
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