PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 5
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PSMN9R5-100PS,127
Manufacturer Part Number
PSMN9R5-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100PS127.pdf
(15 pages)
Specifications of PSMN9R5-100PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
211W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
82nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
89A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 15A, 10V
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.6 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
89 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064327127
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R5-100PS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10 −4
−1
−2
−3
1
10 −
Transient thermal impedance from junction to mounting base as a function of pulse duration
single shot
Thermal characteristics
6
δ = 0.5
0.1
0.05
0.02
0.2
Parameter
thermal resistance from junction to
mounting base
10 −
5
10 −
4
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
10 −
3
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Conditions
see
Figure 4
10 −
2
10 −
PSMN9R5-100PS
1
Min
-
P
1
t
Typ
0.38
p
T
© NXP B.V. 2010. All rights reserved.
t
p
003aad142
(s)
δ =
Max
0.71
T
t
p
t
10
Unit
K/W
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