PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN9R5-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 211W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 89A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.6 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064327127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R5-100PS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10 −4
−1
−2
−3
1
10 −
Transient thermal impedance from junction to mounting base as a function of pulse duration
single shot
Thermal characteristics
6
δ = 0.5
0.1
0.05
0.02
0.2
Parameter
thermal resistance from junction to
mounting base
10 −
5
10 −
4
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
10 −
3
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Conditions
see
Figure 4
10 −
2
10 −
PSMN9R5-100PS
1
Min
-
P
1
t
Typ
0.38
p
T
© NXP B.V. 2010. All rights reserved.
t
p
003aad142
(s)
δ =
Max
0.71
T
t
p
t
10
Unit
K/W
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