PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 15
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PSMN9R5-100PS,127
Manufacturer Part Number
PSMN9R5-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100PS127.pdf
(15 pages)
Specifications of PSMN9R5-100PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
211W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
82nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
89A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 15A, 10V
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.6 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
89 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064327127
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN9R5-100PS
Document identifier: PSMN9R5-100PS
Date of release: 28 October 2010
All rights reserved.