PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 6
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PSMN9R5-100PS,127
Manufacturer Part Number
PSMN9R5-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100PS127.pdf
(15 pages)
Specifications of PSMN9R5-100PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
211W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
82nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
89A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 15A, 10V
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.6 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
89 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064327127
NXP Semiconductors
6. Characteristics
Table 6.
PSMN9R5-100PS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
see
I
see
I
see
V
see
V
T
V
R
Rev. 03 — 28 October 2010
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 60 A; V
= 60 A; V
= 60 A; V
= 60 A; V
Figure
Figure
Figure
Figure 12
Figure 12
Figure 13
Figure 14
Figure
Figure 14
Figure 14
Figure
Figure 15
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 50 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
DS
10; see
10; see
10; see
14; see
14; see
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
DS
L
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
= 0.8 Ω; V
GS
GS
Figure 16
Figure
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 11
Figure 11
Figure 15
Figure 15
; T
; T
; T
GS
14;
j
j
j
j
j
j
GS
GS
GS
GS
j
= 10 V;
= 175 °C;
= 25 °C;
= -55 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
j
j
= 25 °C
j
j
= 125 °C
= 25 °C
= 10 V;
= 3 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
= 10 V;
PSMN9R5-100PS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.02
10
10
-
23.5
8.16
0.7
67
82
21
13.1
7.8
23
4.5
4454
302
185
22
25.2
52.2
22.8
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
-
4
4.8
100
4
100
100
17.3
27.4
9.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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