PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 12
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PSMN9R5-100PS,127
Manufacturer Part Number
PSMN9R5-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100PS127.pdf
(15 pages)
Specifications of PSMN9R5-100PS,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
211W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
82nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
89A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 15A, 10V
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.6 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
89 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064327127
NXP Semiconductors
8. Revision history
Table 7.
PSMN9R5-100PS
Product data sheet
Document ID
PSMN9R5-100PS v.3
Modifications:
PSMN9R5-100PS v.2
Revision history
20101028
20100223
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
Data sheet status
Product data sheet
Product data sheet
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Change notice
-
-
PSMN9R5-100PS
Supersedes
PSMN9R5-100PS v.2
PSMN9R5-100PS v.1
© NXP B.V. 2010. All rights reserved.
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