PSMN9R5-100BS NXP Semiconductors, PSMN9R5-100BS Datasheet
PSMN9R5-100BS
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PSMN9R5-100BS Summary of contents
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... PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... T pulsed ° ° j(init) ≤ 100 V; unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS Graphic symbol mbb076 Version SOT404 Min Max - 100 = 20 kΩ - 100 ...
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... N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 003aae016 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature = 10 μ ...
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... N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board 10 − 10 − 10 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS Min Typ Max - 0.38 0. 003aad142 t p δ = ...
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... MHz °C; see Figure 0.8 Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS Min Typ Max 100 - - 4 100 - 0 ...
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... (A) D Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS Min Typ - 0. 61.5 - 157 003aae022 003aae019 10 5 ...
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... Fig 10. Sub-threshold drain current as a function of 003aad280 3.2 a 2.4 1.6 0.8 120 180 T (°C) j Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS −1 min typ max −2 −3 −4 −5 − gate-source voltage 0 -60 ...
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... I (A) D Fig 14. Gate charge waveform definitions 003aae026 100 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS 003aae027 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN9R5-100BS v.2 20120302 • Modifications: Status changed from objective to product. • Various changes to content. PSMN9R5-100BS v.1 20111025 PSMN9R5-100BS Product data sheet N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN9R5-100BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN9R5-100BS ...