BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
BUK7Y13-40B_3
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
T
V
charge; typical values
0
GS
j
= 25 °C; I
= 0V
D
= 10 A
8
V
DS
= 14 V
16
(A)
I
s
60
40
20
V
0
DS
Q
0
G
003aab399
= 32 V
(nC)
0.2
24
Rev. 03 — 26 May 2008
0.4
T
T
j
j
= 175 °C
= 25 °C
Fig 15. Input, output and reverse transfer capacitances
0.6
(pF)
1600
1200
C
800
400
0
10
V
as a function of drain-source voltage; typical
values
GS
0.8
−1
N-channel TrenchMOS standard level FET
003aab398
V
= 0V ; f = 1 M H z
SD
(V)
1.0
1
BUK7Y13-40B
C
C
C
oss
rss
iss
10
V
© NXP B.V. 2008. All rights reserved.
DS
003aab397
(V)
10
2
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