BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet
BUK7Y13-40B,115
Specifications of BUK7Y13-40B,115
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BUK7Y13-40B,115 Summary of contents
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... BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... °C; see T Figure 2 mb ≤ Ω sup °C; unclamped j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET Graphic symbol mbb076 Min Max - and Figure 4 - 234 - 85 -55 175 -55 175 ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature (A) 10 (2) ( Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aab220 10 (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7Y13-40B_3 Product data sheet DC 10 Conditions see Figure Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab218 = 10 μ 100 μ 100 ms V (V) DS Min Typ Max ...
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... Figure ° see Figure 13 and ° see Figure /dt = 100 A/μ see Figure ° MHz see Figure 15 = 2.5 Ω Ω G(ext) Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 0. 100 - 2 100 - - 0.85 1 983 1311 - 280 336 ...
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... T Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab400 ( ° ( Fig 9. Forward transconductance as a function of drain current; typical values Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab395 ( ° 003aab401 ( °C;V = 25V j DS © NXP B.V. 2008. All rights reserved. ...
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... Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aab851 DSon (mΩ 120 180 0 T (° °C j Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 26 May 2008 BUK7Y13-40B 03aa35 min typ max ( 003aab396 120 160 I (A) D © ...
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... GS Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values ( 175 ° ° 0.2 0.4 0.6 Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET 003aab397 C iss C oss C rss − ( 003aab398 0.8 1.0 V (V) SD © NXP B.V. 2008. All rights reserved. ...
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... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 ...
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... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Product data sheet 5, maximum thermal resistance value updated Product data sheet Product data sheet Rev. 03 — 26 May 2008 BUK7Y13-40B Change notice Supersedes - BUK7Y13-40B_2 - BUK7Y13-40B_1 - - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 26 May 2008 BUK7Y13-40B N-channel TrenchMOS standard level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7Y13-40B_3 All rights reserved. Date of release: 26 May 2008 ...