BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 6

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
BUK7Y13-40B_3
Product data sheet
Fig 6. Output characteristics: drain current as a
Fig 8. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
160
120
80
40
50
40
30
20
10
0
0
T
V
function of drain-source voltage; typical values
function of gate-source voltage; typical values
0
0
DS
j
= 25 °C
= 25V
20
2
10
9.5
2
9
2
T
j
8.5
= 175 °C
6
V
8
GS
4
(V) = 4.5
T
j
V
= 25 °C
8
GS
7.5
003aab394
6.5
5.5
003aab400
V
7
6
5
DS
(V)
(V)
10
6
Rev. 03 — 26 May 2008
Fig 7. Drain-source on-state resistance as a function
Fig 9. Forward transconductance as a function of
R
(mΩ)
DSon
(S)
g
fs
20
15
10
70
60
50
40
30
5
T
T
of gate-source voltage; typical values
drain current; typical values
4
5
j
j
= 25 °C; I
= 25 °C;V
N-channel TrenchMOS standard level FET
10
D
8
DS
= 25 A
= 25V
15
BUK7Y13-40B
12
20
16
© NXP B.V. 2008. All rights reserved.
25
V
003aab395
003aab401
GS
I
D
(V)
(A)
20
30
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