BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 4

MOSFET N-CH TRENCH 40V LFPAK

BUK7Y13-40B,115

Manufacturer Part Number
BUK7Y13-40B,115
Description
MOSFET N-CH TRENCH 40V LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7Y13-40B,115

Package / Case
LFPak-4
Mounting Type
Surface Mount
Power - Max
85W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
19nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
58A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 25A, 10V
Gate Charge Qg
19 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
58 A
Power Dissipation
85 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060169115
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y13-40B_3
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
(A)
th (j-mb)
I
10
10
10
D
10
10
10
10
−1
-1
-2
1
1
3
2
T
10
1
mb
-6
0.2
δ = 0.5
0.05
0.02
0.1
Thermal characteristics
= 25 °C; I
single shot
Parameter
thermal resistance
from junction to
mounting base
Limit R
DSon
DM
is single pulse
= V
10
DS
-5
/ I
D
Conditions
see
Figure 5
10
-4
Rev. 03 — 26 May 2008
DC
10
10
-3
N-channel TrenchMOS standard level FET
10
Min
-
-2
V
DS
(V)
BUK7Y13-40B
Typ
-
t
100 μs
1 ms
10 ms
100 ms
p
10
P
= 10 μs
-1
t
p
T
t
p
Max
1.8
© NXP B.V. 2008. All rights reserved.
(s)
003aab218
δ =
03nm01
T
t
p
t
10
1
2
Unit
K/W
4 of 12

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