BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 4

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y13-40B_3
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
(A)
th (j-mb)
I
10
10
10
D
10
10
10
10
−1
-1
-2
1
1
3
2
T
10
1
mb
-6
0.2
δ = 0.5
0.05
0.02
0.1
Thermal characteristics
= 25 °C; I
single shot
Parameter
thermal resistance
from junction to
mounting base
Limit R
DSon
DM
is single pulse
= V
10
DS
-5
/ I
D
Conditions
see
Figure 5
10
-4
Rev. 03 — 26 May 2008
DC
10
10
-3
N-channel TrenchMOS standard level FET
10
Min
-
-2
V
DS
(V)
BUK7Y13-40B
Typ
-
t
100 μs
1 ms
10 ms
100 ms
p
10
P
= 10 μs
-1
t
p
T
t
p
Max
1.8
© NXP B.V. 2008. All rights reserved.
(s)
003aab218
δ =
03nm01
T
t
p
t
10
1
2
Unit
K/W
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