BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 3

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
BUK7Y13-40B_3
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
I
60
D
40
20
0
V
mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
10V
50
j
j
= 25 °C.
= 150 °C.
100
10
10
(A)
I
10
AL
150
-1
2
1
10
-3
T
003aab217
mb
(°C)
200
10
Rev. 03 — 26 May 2008
-2
10
-1
Fig 2. Normalized total power dissipation as a
(1)
(2)
(3)
P
(%)
der
120
80
40
0
1
P
function of mounting base temperature
0
der
t
AL
003aab220
N-channel TrenchMOS standard level FET
(ms)
=
P
tot ( 25°C )
10
P
50
tot
× 100 %
BUK7Y13-40B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
3 of 12