BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 10

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
8. Revision history
Table 7.
BUK7Y13-40B_3
Product data sheet
Document ID
BUK7Y13-40B_3
Modifications:
BUK7Y13-40B_2
BUK7Y13-40B_1
Revision history
Release date
20080526
20071002
20070924
•
Table
5, maximum thermal resistance value updated
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 26 May 2008
N-channel TrenchMOS standard level FET
Change notice
-
-
-
BUK7Y13-40B
Supersedes
BUK7Y13-40B_2
BUK7Y13-40B_1
-
© NXP B.V. 2008. All rights reserved.
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