BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

NXP Semiconductors
BUK7219-55A_2
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(pF)
3000
2500
2000
1500
1000
C
500
120
0
10
All information provided in this document is subject to legal disclaimers.
−2
T
j
(°C)
03aa28
Rev. 02 — 3 February 2010
180
10
−1
1
Fig 14. Reverse diode current as a function of reverse
C
C
C
oss
rss
iss
(A)
I
S
100
80
60
40
20
0
10
0.0
diode voltage; typical values
V
N-channel TrenchMOS standard level FET
DS
03na38
(V)
T
j
10
= 175 °C
2
0.5
BUK7219-55A
T
1.0
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
V
SD
(V)
03na32
1.5
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