BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

NXP Semiconductors
BUK7219-55A_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
100
D
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
T
j
= 175 °C
2
0
4
60
T
max
min
typ
j
= 25 °C
6
120
All information provided in this document is subject to legal disclaimers.
8
T
V
j
GS
(°C)
03na31
03aa32
(V)
Rev. 02 — 3 February 2010
180
10
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
RDSon
(mΩ)
V
(V)
GS
10
35
30
25
20
15
10
8
6
4
2
0
gate charge; typical values
of drain current; typical values
0
0
V
N-channel TrenchMOS standard level FET
GS
(V) = 6
50
6.5
20
V
DD
7
BUK7219-55A
100
= 14 V
8
40
V
150
DD
© NXP B.V. 2010. All rights reserved.
Q
9
G
= 44 V
ID (A)
(nC)
10
03na37
03na33
200
60
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