BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7219-55A_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
0.01
0.1
10
1
10
0.02
−6
0.5
0.2
0.05
0.1
Single Shot
10
−5
Conditions
see
Figure 4
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 02 — 3 February 2010
10
−3
10
−2
10
−1
N-channel TrenchMOS standard level FET
1
P
t
p
T
10
Min
-
-
BUK7219-55A
δ =
t
p
03na40
(s)
t
T
t
p
10
Typ
-
71.4
2
© NXP B.V. 2010. All rights reserved.
Max
1.3
-
Unit
K/W
K/W
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