BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet

MOSFET N-CH 55V 55A DPAK

BUK7219-55A,118

Manufacturer Part Number
BUK7219-55A,118
Description
MOSFET N-CH 55V 55A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7219-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
2108pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55 A
Power Dissipation
114000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056242118
BUK7219-55A /T3
BUK7219-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Static characteristics
R
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK7219-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2010
drain-source voltage T
drain current
total power
dissipation
non-repetitive
drain-source
avalanche energy
drain-source
on-state resistance
Quick reference
V
Conditions
see
T
I
R
T
V
T
see
V
T
see
D
j
mb
j(init)
j
j
GS
GS
GS
GS
≥ 25 °C; T
= 49 A; V
= 175 °C;
= 25 °C;
Figure 1
= 25 °C; see
Figure 12
Figure 12
= 5 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
mb
j
D
D
and
≤ 175 °C
GS
and
and
= 25 A;
= 25 A;
≤ 55 V;
= 25 °C;
= 10 V;
3
Figure 2
13
13
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
16
Max
55
55
114
120
38
19
Unit
V
A
W
mJ
mΩ
mΩ

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BUK7219-55A,118 Summary of contents

Page 1

... BUK7219-55A N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 2 mb ≤ Ω sup °C; unclamped j(init °C mb ≤ 10 µs; pulsed ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET Graphic symbol mb G mbb076 Min - - -20 - and 3 - [1] Figure -55 - ...

Page 3

... T (°C) mb Fig DSon δ D. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03na39 μs 100 μ 100 ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7219-55A_2 Product data sheet Conditions see Figure 4 −4 −5 −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03na40 t p δ ...

Page 5

... °C j measured from source lead from package to source bond pad ° ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET Min Typ 0. 1581 - 372 ...

Page 6

... BUK7219-55A_2 Product data sheet 03na36 R DSon (mΩ (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of turn-on 03aa32 RDSon 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET ( gate charge; typical values 35 (mΩ ...

Page 8

... C iss 2000 1500 C oss 1000 500 C rss 0 −2 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET 175 ° ° 0.0 0.5 1.0 diode voltage; typical values 03na38 2 10 ...

Page 9

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 10

... BUK7219-55A_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A Supersedes BUK7219-55A-01 - © NXP B.V. 2010. All rights reserved ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2010 BUK7219-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2010 Document identifier: BUK7219-55A_2 ...

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