BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK7219-55A_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK7219-55A
Symbol
V
V
V
I
I
P
T
T
Avalanche ruggedness
E
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Peak drain current is limited by chip, not package.
Symbol
G
d
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
source current
peak source current
Package
Name
DPAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
Conditions
T
R
T
T
T
T
I
T
t
T
D
p
j
mb
mb
mb
mb
j(init)
mb
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 49 A; V
All information provided in this document is subject to legal disclaimers.
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
Rev. 02 — 3 February 2010
sup
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
Figure 1
Figure 1
SOT428 (DPAK)
1
Figure 3
N-channel TrenchMOS standard level FET
GS
and
mb
2
= 10 V;
3
3
[1]
BUK7219-55A
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
55
55
20
39
55
250
114
175
175
120
55
250
Version
SOT428
D
S
V
°C
°C
Unit
V
V
A
A
A
W
mJ
A
A
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