BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

NXP Semiconductors
BUK7219-55A_2
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
1000
I
D
100
10
1
1
P
100
t
p
T
R
DSon
δ =
150
= V
t
T
t
All information provided in this document is subject to legal disclaimers.
p
T
DS
mb
/ I
03aa24
(°C)
D
Rev. 02 — 3 February 2010
200
D.C.
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
tp = 10 μs
100 μs
10 ms
100 ms
1 ms
BUK7219-55A
100
03na39
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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