SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 6

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
10
I
10
10
10
10
10
I
D
D
50
40
30
20
10
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.5
1
10 V
min
5 V
typ
2
1
max
V
GS
V
V DS (V)
GS
03aa36
= 2.6 V
(V)
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
03ad50
3 V
Rev. 03 — 4 December 2009
3
1.5
Fig 6.
Fig 8.
(pF)
(A)
I
C
D
10
10
10
50
40
30
20
10
0
4
3
10
function of gate-source voltage; typical values
as a function of drain-source voltage; typical
values
Transfer characteristics: drain current as a
Input, output and reverse transfer capacitances
0
−1
V
DS
N-channel TrenchMOS logic level FET
> I
D
1
x R
T
j
1
DSon
= 150 °C
2
10
25 °C
SI4410DY
3
© NXP B.V. 2009. All rights reserved.
V
DS
V
C
C
C
GS
(V)
03ad54
iss
oss
rss
03ad52
(V)
10
4
2
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