SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 2

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
SI4410DY_3
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
SI4410DY
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
D
DM
S
stg
j
DS
GS
tot
Symbol
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
SO8
Package
Name
Description
source
source
source
gate
drain
drain
drain
drain
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
T
T
see
T
see
t
see
T
see
T
see
T
p
j
amb
amb
amb
amb
amb
≤ 10 µs; T
≥ 25 °C; T
Figure 1
Figure 1
Figure 3
Figure 2
Figure 2
= 70 °C; pulsed;
= 25 °C; pulsed;
= 70 °C; pulsed;
= 25 °C; pulsed;
= 25 °C; pulsed
Rev. 03 — 4 December 2009
amb
j
and
≤ 150 °C
= 25 °C; pulsed;
3
Simplified outline
SOT96-1 (SO8)
8
1
N-channel TrenchMOS logic level FET
5
4
Graphic symbol
Min
-
-20
-
-
-
-
-
-55
-55
-
SI4410DY
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
30
20
8
10
50
1.6
2.5
150
150
2.3
D
Version
SOT96-1
S
Unit
V
V
A
A
A
W
W
°C
°C
A
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