SI4410DY NXP Semiconductors, SI4410DY Datasheet
SI4410DY
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SI4410DY Summary of contents
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... SI4410DY N-channel TrenchMOS logic level FET Rev. 03 — 4 December 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure °C; pulsed; amb see Figure °C; pulsed; amb see Figure °C; pulsed amb Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET Graphic symbol mbb076 4 Version SOT96-1 Min Max - 30 - ...
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... P der (%) 150 200 0 T (°C) amb Fig 2. Normalized total power dissipation as a function of ambient temperature D.C. 1 Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET 03aa11 50 100 150 200 T (°C) amb 03ae23 µ 100 ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration SI4410DY_3 Product data sheet Conditions mounted on a printed-circuit board; minimum footprint; tp ≤ see Figure 4 −2 − Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET Min Typ Max - - - - - 50 03ad49 δ ...
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... see Figure 2 ° see Figure 2 /dt = -100 A/µ ° Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET Min Typ Max 100 - - 100 - 13 ...
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... C (pF) max (V) GS Fig 8. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET 03ad52 V > DSon = 150 ° ° 03ad54 ...
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... ( º 120 180 0 T (°C) j Fig 12. Gate-source voltage as a function of gate charge; typical values Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET 03ad51 3.4 V 3 ° 3 4 ...
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... I (A) D Fig 14. Source current as a function of source-drain voltage; typical values Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET 150 ° ° 0.4 0.8 1 © NXP B.V. 2009. All rights reserved. ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 ...
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... Legal texts have been adapted to the new company name where appropriate. SI4410DY-02 20010705 SI4410DY-01 20010220 SI4410DY_3 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product specification - Product specification - Rev. 03 — 4 December 2009 SI4410DY Supersedes SI4410DY-02 SI4410DY-01 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 December 2009 SI4410DY All rights reserved. Document identifier: SI4410DY_3 ...