SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 4

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
SI4410DY_3
Product data sheet
Symbol
R
R
Z th(j-amb)
Fig 4.
th(j-sp)
th(j-a)
(K/W)
10
10
10
10
1
−1
−2
2
10
Transient thermal impedance from junction to solder point as a function of pulse duration
−4
δ = 0.5
0.2
0.1
0.05
0.02
Thermal characteristics
Parameter
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
single pulse
10
−3
Conditions
mounted on a printed-circuit board;
minimum footprint; tp ≤ 10 s;
see
10
−2
Figure 4
Rev. 03 — 4 December 2009
10
−1
1
N-channel TrenchMOS logic level FET
10
Min
-
-
P
10
Typ
-
-
2
t
p
SI4410DY
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
δ =
Max
-
50
03ad49
t
T
t
p
10
3
Unit
K/W
K/W
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