si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet
si4410dy-02
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si4410dy-02 Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: Si4410DY in SOT96-1 (SO8). 2. Features Low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications convertors DC motor control ...
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... pulsed Figure 3 amb pulsed Figure 1 amb pulsed Figure 1 amb pulsed amb p Rev. 02 — 05 July 2001 Si4410DY Typ Max Unit 2.5 W 150 Min Max Unit ...
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... T amb ( der Fig 2. Normalized continuous drain current as a function of mounting base temperature. D.C. 1 Rev. 02 — 05 July 2001 Si4410DY 03aa19 100 125 150 175 o T amb ( ------------------ - 100 03ae23 µs ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 08048 Product data N-channel enhancement mode field-effect transistor Conditions mounted on a printed circuit board; t minimum footprint; Figure Rev. 02 — 05 July 2001 Si4410DY Value Unit 03ad49 ...
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... Figure 2.3A Figure 2 /dt = 100 Rev. 02 — 05 July 2001 Si4410DY Min Typ Max Unit 100 13 21 ...
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... --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 05 July 2001 Si4410DY 03ad52 V DS > DSon 150 ºC 25 º ( DSon 03ad57 0 ...
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... C (pF ( MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 02 — 05 July 2001 Si4410DY 03aa36 min typ max 0 0.5 1 1 03ad54 C iss C oss ...
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... Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 05 July 2001 Si4410DY 03ad55 º (nC © Philips Electronics N.V. 2001. All rights reserved ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.050 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012AA Rev. 02 — 05 July 2001 Si4410DY detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.004 0.016 0.024 ...
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... Revision history Table 6: Revision history Rev Date CPCN Description 02 20010705 - Correction 20010220 - Product specification; initial version 9397 750 08048 Product data N-channel enhancement mode field-effect transistor condition DM Rev. 02 — 05 July 2001 Si4410DY © Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 02 — 05 July 2001 Si4410DY performance. Philips Semiconductors assumes © Philips Electronics N.V. 2001 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA72) Rev. 02 — 05 July 2001 Si4410DY © Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 05 July 2001 Document order number: 9397 750 08048 N-channel enhancement mode field-effect transistor Printed in The Netherlands Si4410DY ...