SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 5

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
6. Characteristics
Table 6.
SI4410DY_3
Product data sheet
Symbol
Static characteristics
V
I
I
R
I
Dynamic characteristics
Q
Q
Q
t
t
t
t
g
Source-drain diode
V
t
DSS
GSS
DSon
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DSon
G(tot)
GS
GD
Characteristics
Parameter
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
on-state drain-source
current
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
source-drain voltage
reverse recovery time
Conditions
I
see
V
V
V
V
V
see
V
see
V
I
T
I
T
V
R
V
see
I
see
I
V
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
DS
= 250 µA; V
= 10 A; V
= 25 °C; see
= 10 A; V
= 25 °C; see
= 2.3 A; V
= 2.3 A; dI
Figure 9
Figure 10
Figure 10
Figure 13
Figure 14
= 30 V; V
= 30 V; V
≥ 5 V; V
= 25 V; R
= 15 V; I
= 25 V; T
= 20 V; V
= -20 V; V
= 4.5 V; I
= 10 V; I
= 6 Ω; T
Rev. 03 — 4 December 2009
DS
DS
GS
GS
S
D
D
D
j
GS
GS
DS
L
/dt = -100 A/µs; V
DS
and
and
DS
= 25 °C
= 10 A; T
= 15 V; V
= 15 V; V
= 10 A; T
j
= 5 A; T
= 10 V
Figure 12
Figure 12
= 25 Ω; V
= 0 V; T
= 25 °C
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
11
11
GS
; T
j
j
j
GS
GS
j
= 25 °C;
= 25 °C;
j
j
j
= 25 °C;
GS
= 25 °C;
j
j
= 25 °C
= 55 °C
= 25 °C
= 25 °C;
= 25 °C
= 5 V;
= 10 V;
= 10 V;
GS
= 0 V;
N-channel TrenchMOS logic level FET
Min
1
-
-
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
15
11
-
21.5
40
8
7
13.5
9
70
30
34
0.7
50
SI4410DY
© NXP B.V. 2009. All rights reserved.
Max
-
1
25
100
100
20
13.5
-
34
60
-
-
30
20
100
80
-
1.1
80
Unit
V
µA
µA
nA
nA
mΩ
mΩ
A
nC
nC
nC
nC
ns
ns
ns
ns
S
V
ns
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