HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet - Page 5

• Manufacturer Part Number: HUF75852G3
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75852G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 480nC @ 20V
• Input Capacitance (ciss) @ Vds: 7690pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
1.2
1.1
1.0
0.9
-80
I
D
VOLTAGE vs JUNCTION TEMPERATURE
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
10
8
6
4
2
0
0
(Continued)
120
V
DD
o
C)
= 75V
160
50
200
Q
g
, GATE CHARGE (nC)
100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
150
WAVEFORMS IN
DESCENDING ORDER:
20000
10000
1000
100
I
I
D
D
0.1
= 75A
= 30A
C
V
RSS
GS
200
= 0V, f = 1MHz
C
V
GD
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
250
OSS
1.0
C
DS
+ C
GD
C
10
ISS
C
HUF75852G3 Rev. B
GS
+ C
GD
100