HUF75852G3 Fairchild Semiconductor, HUF75852G3 Datasheet - Page 3

• Manufacturer Part Number: HUF75852G3
• Description: MOSFET N-CH 150V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75852G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 480nC @ 20V
• Input Capacitance (ciss) @ Vds: 7690pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
2000
1000
1.2
1.0
0.8
0.6
0.4
0.2
100
50
0
10
0.01
0
0.1
-5
2
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
V
GS
= 10V
T
50
C
, CASE TEMPERATURE (
10
75
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILIT Y
10
-3
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
NOTES:
DUTY FACTOR: D = t
PEAK T
J
CASE TEMPERATURE
50
= P
10
DM
10
-1
T
-1
x Z
C
, CASE TEMPERATURE (
75
JC
1
/t
x R
2
JC
V
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
GS
100
C
I = I
+ T
= 25
= 10V
C
25
o
10
C
10
P
o
DM
0
0
C DERATE PEAK
125
175 - T
o
C)
150
t
1
HUF75852G3 Rev. B
t
C
2
150
175
10
10
1
1