FQA24N50F Fairchild Semiconductor, FQA24N50F Datasheet - Page 3
![MOSFET N-CH 500V 24A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
FQA24N50F
Manufacturer Part Number
FQA24N50F
Description
MOSFET N-CH 500V 24A TO-3P
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet
1.FQA24N50F.pdf
(8 pages)
Specifications of FQA24N50F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
290W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA24N50F
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQA24N50F
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQA24N50F
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Typical Characteristics
7000
6000
5000
4000
3000
2000
1000
10
10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0
10
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
20
GS
V
V
DS
DS
40
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
iss
oss
rss
60
V
GS
= 20V
V
GS
= 10V
80
C
C
C
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
C
1
gs
gd
= 25 ℃
ds
+ C
+ C
※ Notes :
100
1. V
2. f = 1 MHz
gd
gd
(C
GS
J
ds
= 25℃
= 0 V
= shorted)
120
10
10
10
10
10
10
12
10
-1
1
0
-1
8
6
4
2
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
150℃
0.4
Variation with Source Current
20
25℃
150℃
0.6
4
25℃
V
V
and Temperature
GS
SD
Q
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
0.8
40
V
1.0
DS
6
V
DS
V
= 400V
DS
= 250V
-55℃
= 100V
60
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 50V
= 0V
80
D
= 24 A
1.6
Rev. A2, September 2001
100
1.8
10