FDP20N50 Fairchild Semiconductor, FDP20N50 Datasheet - Page 4

• Manufacturer Part Number: FDP20N50
• Description: MOSFET N-CH 500V 20A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP20N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohms
• Forward Transconductance Gfs (max / Min): 24.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50 / FDPF20N50 Rev. C
Typical Performance Characteristics
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
25
20
15
10
1.2
1.1
1.0
0.9
0.8
5
0
-1
-2
2
1
0
25
10
-100
0
- FDP20N50
-50
vs. Temperature
50
Operation in This Area
is Limited by R
T
V
J
T
, Junction Temperature [
DS
C
, Case Temperature [
0
, Drain-Source Voltage [V]
10
DS(on)
1
75
50
100
100
o
100 ms
C]
o
C]
* Notes :
DC
10 ms
10
* Notes :
1. T
2. T
3. Single Pulse
1. V
2. I
2
C
J
D
1 ms
GS
= 150
= 25
125
= 250
150
= 0 V
100
o
C
o
μ
C
A
μ
s
10
(Continued)
200
μ
s
150
4
10
10
10
10
10
-1
-2
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
-100
0
Operation in This Area
is Limited by R
-50
V
- FDPF20N50
DS(on)
DS
T
vs. Temperature
, Drain-Source Voltage [V]
J
10
, Junction Temperature [
1
0
50
DC
100 ms
* Notes :
10 ms
1. T
2. T
3. Single Pulse
100
10
C
J
1 ms
= 150
= 25
2
o
C]
100
o
C
o
C
10
μ
* Notes :
s
1. V
2. I
150
μ
s
D
www.fairchildsemi.com
GS
= 10 A
= 10 V
200