FDP20N50 Fairchild Semiconductor, FDP20N50 Datasheet

MOSFET N-CH 500V 20A TO-220

FDP20N50

Manufacturer Part Number
FDP20N50
Description
MOSFET N-CH 500V 20A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheets

Specifications of FDP20N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59.5nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.23 Ohms
Forward Transconductance Gfs (max / Min)
24.6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
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FDP20N50
Manufacturer:
FAIRCHILD
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Quantity:
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Part Number:
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Company:
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©2006 Fairchild Semiconductor Corporation
FDP20N50 Rev. A1
FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R
• Low gate charge ( typical 45.6 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 27 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.23Ω @V
G
D
GS
S
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
TO-220
FDP Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Min.
0.5
--
--
FDP20N50
-55 to +150
G
1110
12.9
± 30
25.0
500
250
300
4.5
2.0
20
80
20
Max.
62.5
0.5
UniFET
--
S
D
May 2006
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FDP20N50

FDP20N50 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDP20N50 Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 20A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP20N50 Rev. A1 Package Reel Size TO-220 -- T = 25°C unless otherwise noted C Conditions 250μ 25° ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C oss 4000 C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP20N50 Rev. A1 Figure 2. Transfer Characteristics ∝ Notes : 1. 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage V = 10V 20V GS ∝ Note : T = 25∩ ...

Page 4

... Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDP20N50 Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 ∝ Notes : 0 250 レ A 0.5 D 0.0 -100 0.0 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDP20N50 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP20N50 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 (8.70) ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP20N50 Rev. A1 TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDP20N50 Rev. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...

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