FQA9N90_F109 Fairchild Semiconductor, FQA9N90_F109 Datasheet - Page 2

• Manufacturer Part Number: FQA9N90_F109
• Description: MOSFET N-CH 900V 8.6A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA9N90_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 240W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.6 A
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA9N90_F109 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 23mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 8.6A, di/dt ≤200A/µs, V
DSS
FQA9N90
/
AS
=8.6A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
FQA9N90_F109
≤ BV
G
Device
Parameter
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-3PN
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 900 V, V
= 720 V, T
= V
= 50 V, I
= 25 V, V
= 720 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 450 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
D
D
= 8.6 A
= 8.6 A,
= 250 µA
DS
GS
D
D
= 250 µA
DS
= 4.3 A
GS
C
= 4.3 A
--
= 8.6A,
= 8.6A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Tape Width
Min
--
900
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2100
Typ
200
100
135
720
1.0
1.0
9.2
7.6
25
45
80
55
12
26
--
--
--
--
--
--
--
--
--
Quantity
Max Units
2700
-100
34.4
100
100
260
100
210
280
170
5.0
1.3
8.6
1.4
www.fairchildsemi.com
10
33
72
--
--
--
--
--
--
--
30
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
µC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V