fqa9n90-f109 Fairchild Semiconductor, fqa9n90-f109 Datasheet

no-image

fqa9n90-f109

Manufacturer Part Number
fqa9n90-f109
Description
Fqa9n90_f109 900v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. A
FQA9N90_F109
900V N-Channel MOSFET
Features
• 8.6A, 900V, R
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 25pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 1.3Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
Parameter
TO-3PN
FQA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FQA9N90_F109
-55 to +150
S
D
5.45
34.4
± 30
19.2
900
900
240
300
8.6
8.6
4.0
24
Max
0.52
40
--
QFET
November 2007
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for fqa9n90-f109

fqa9n90-f109 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQA9N90_F109 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... ≤ 8.6A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA9N90_F109 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µ ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C iss 3000 C oss 2000 C rss 1000 Drain-Source Voltage [V] DS FQA9N90_F109 Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA9N90_F109 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D 0.0 -100 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQA9N90_F109 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQA9N90_F109 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQA9N90_F109 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ Build it Now™ Green FPS™ e-Series™ CorePLUS™ ...

Related keywords